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january 2008 rev 1 1/12 12 STW24NK55Z n-channel 550 v - 0.18 ? - 23 a - to-247 zener-protected supermesh? power mosfet features extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufact uring repeatability application switching applications description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mosfets. figure 1. internal schematic diagram type v dss r ds(on) i d pw STW24NK55Z 550 v <0.22 ? 23 a 285 w 1 2 3 to-247 table 1. device summary order code marking package packaging STW24NK55Z 24nk55z to-247 tube www.st.com
contents STW24NK55Z 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW24NK55Z electrical ratings 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 550 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 23 a i d drain current (continuous) at t c =100 c 10.35 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 92 a p tot total dissipation at t c = 25 c 285 w derating factor 2.27 w/c dv/dt (2) 2. i sd 23 a, di/dt 200 a/s,v dd = 80% v (br)dss peak diode recovery voltage slope 4.5 v/ns t stg storage temperature -55 to 150c c t j max. perating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.44 c/w r thj-a thermal resistance junc tion-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 23 a e as single pulse avalanche energy (starting tj=25 c, i d =i ar , v dd =50 v) 400 mj
electrical characteristics STW24NK55Z 4/12 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 550 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 33.754.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 11.5 a 0.18 0.22 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300 s, duty cycle 1.5% forward transconductance v ds =15 v, i d = 11.5 a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 4397.5 480.5 116 pf pf pf c oss eq (2) . 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0 to 480 v 250 pf r g intrinsic gate resistance f=1 mhz, open drain 2.3 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 440 v, i d = 23 a v gs =10 v (see figure 15) 130 25 76 nc nc nc t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 275 v, i d =11.5 a, r g = 4.7 ?, v gs =10 v (see figure 14) 30 35 136 88 ns ns ns ns
STW24NK55Z electrical characteristics 5/12 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 23 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 92 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd = 23 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 23 a, v dd = 50 v di/dt = 100 a/s, (see figure 18) 508 7.4 29 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 23 a, di/dt = 100 a/s, v dd = 50 v, tj=150 c (see figure 18) 608 9.7 31.8 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have spec ifically been designed to enhance not only the device?s esd capability, but also to make them safely absor b possible voltage transients that may occasionally be applied from gate to source. in this respect the z ener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s in tegrity. these integrated zener diodes thus avoid the usage of external components. gate-source breakdown voltage igs=1 ma (open drain) 30 v
electrical characteristics STW24NK55Z 6/12 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance 0 5 10 15 20 25 30 v ds (v) 0 10 20 30 40 50 60 70 i d (a) hv41790 5v 6v 7v v gs =10v 0246810 v gs (v) 0 10 20 30 40 50 60 70 i d (a) hv41795 v ds = 20v 5 101520 i d (a) 0.12 0.14 0.15 0.18 r ds(on) ( ? ) hv41880
STW24NK55Z electrical characteristics 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. maximum avalanche energy vs temperature figure 13. source-drain diode forward characteristics 0 50 100 150 qg (nc) 0 2 4 6 8 10 12 v gs (v) hv41800 v dd =440v i d =23a v gs =10v 0 30 60 90 120 150 0 50 100 150 200 250 300 350 400 450 hv41780 t j (?c) e as (mj) 0 5 10 15 20 i d (a) 0.000000 0.199999 0.399999 0.599998 0.799998 0.999997 1.199997 0 0.2 0.4 0.6 0.8 1.0 v sd (v) hv41850 tj = -50?c 25?c 150?c
test circuits STW24NK55Z 8/12 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive wavefo rm figure 19. switching time waveform
STW24NK55Z package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STW24NK55Z 10/12 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STW24NK55Z revision history 11/12 5 revision history table 9. document revision history date revision changes 04-jan-2008 1 first release
STW24NK55Z 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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